技术档案
NAND 闪存制造设备NAND flash manufacturing equipment
制造NAND闪存的设备
每条都摘自下方编号的来源原文；只写事实，不写预测或建议。
技术简介
- NAND闪存制造中的刻蚀工艺需要穿透数十层交替材料，形成沟道。2
Going vertical in NAND meant etching channels through dozens of alternating material layers with extraordinary precision.
已有应用
- 泛林ALTUS Halo系统用于3D NAND高深宽比字线的钼填充，以钼替代钨。2
Our ALTUS® Halo system, for example, delivers void-free molybdenum fill for the high-aspect-ratio wordlines that 3D NAND requires, replacing tungsten at a point when resistance had become a limiting factor for device performance.
主要参与者
- 据路透社报道，大连NAND工厂使用泛林、应用材料和科磊的设备。1
The Dalian NAND facility uses tools from major US semiconductor equipment makers like Lam Research, Applied Materials and KLA.