技术档案

HBM先进封装HBM advanced packaging

堆叠封装高带宽内存

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技术简介

HBM先进封装将多层内存芯片在更小占地面积上垂直堆叠。3
This sophisticated process involves vertically stacking multiple layers of memory chips on a smaller footprint to reach higher computational performance and energy efficiency.
三星HBM4以12层堆叠提供24GB至36GB容量。1
Through 12-layer stacking technology, Samsung offers HBM4 in capacities ranging from 24 gigabytes (GB) to 36GB.

已有应用

三星已量产的第六代HBM4面向英伟达Vera Rubin平台设计。2
The centerpiece of Samsung’s showcase at NVIDIA GTC 2026 will be the new sixth-generation HBM4, which is now in mass production and is designed for the NVIDIA Vera Rubin platform.

为何此时

Air Liquide于2026年7月表示下一代HBM等内存芯片需要不断增加的高纯气体数量，并将向SK海力士新封装厂供气。3
As next-generation memory chips, such as High Bandwidth Memory (HBM), require ever-increasing quantities of high-purity gases, Air Liquide will deliver large volumes of nitrogen, oxygen, argon, hydrogen and other industrial gases to SK hynix’s new cutting-edge advanced chips packaging facility.

主要参与者

三星电子于2026年2月12日宣布已量产HBM4并向客户出货。1
Samsung Electronics, a global leader in advanced memory technology, today announced that it has begun mass production of its industry-leading HBM4 and has shipped commercial products to customers.

来源